Directory

 

 
 
General InformationPublicationsResearch Projects

  • T Tsuchiya and Patrick M Lenahan, 2017, "Distribution of Energy Levelsof Individual Interface Traps and a Fundamental Refinement of Charge Pumping Theory", Japanese Journal of Applied Physics, 56, pp. 7
  • Corey J Cochrane, Jordana Blacksburg, Mark A Anders and Patrick M Lenahan, 2016, "Vectorized Magnetometer for Space Applications Using Electrical Readout of Atomic Scale Defects in Silicon Carbide", Nature: Science Reports, 6, pp. #37077
  • Mark A Anders, Patrick M Lenahan, Aivars J Le andis, , 2016, "Are Dangling Bond Centers Important Interface Traps in 4H SiC Metal Oxide Semiconductor Field Effect Transistors?", Applied Physics Letters, 109, pp. art # :142106
  • Michael J Mutch, Patrick M Lenahan, Sean W K andng, , 2016, "Spin Transport, magnetoresistance, and electrically detected magnetic resonance in amorphous hydrogenated silicon nitride", Applied Physics Letters, 109, pp. art#:062403
  • Michael J Mutch, Patrick M Lenahan, Thomas Pomarski, Brad C Bittel and Sean W King, 2016, "Band Diagrams for Low -k / Cu Interconnects : the starting point for u8nderstanding back end of the line (BEOL) electrical reliability", Microelectronics Engineering, 63, pp. p.201...
  • Michael J Mutch, Patrick M Lenahan and Sean W King, 2016, "Defect Chemistry and Electronic Transport in Low-K Dielectrics Studied with Electrically Detected Magnetic Resonance", Journal of Appliued Physics, 119, pp. art#;094102
  • Sebastian I Goodridge, Patrick M Lenahan, Chadwin D Young, M Quavido-Lo andez, , 2016, "Spin Dependent Recombination in CdTe Solar Cells", IEEE Photovoltaics Specialists Conference Proceedings, pp. 4
  • Ryan J Waskiewicz, Patrick M Lenahan and Mark A Anders, 2016, "Radiation Induced Leakage Currents in Dense and Porous Low-K Dielectrics", IEEE
  • Ryan J Waskiewicz, J , Mark A Anders and Aivars J Lelis, 2016, "Ionizing Radiation Effects in 4H SiC MOSFETs Studied With Electrically Detected Magnetic Resonance", IEEE Transactions on Nuclear Science, 64, (1)
  • Mark A Anders, Patrick M Lenahan, Aivars j Le andis, , 2016, "A Surprising Result: Bulk SiC Defects in The Negative Bias Temperature Instability in 4H SiC MOSFETs", Materials Science Forum, 858, pp. 4
  • Corey J Cochrane, Jordana Blacksburg, Patrick M Lenahan and Mark A Anders, 2016, "Magnetic Field Sensing With Atomic Scale Defects in SiC Devices", Materials Science Forum, 858, pp. 4
  • Russell A Meier, Thomas A Pomorski, Patrick M Lenahan and Clive A Randall, 2015, "Acceptor-oxygen vacancy defect dipoles and fully coordinated defect centers in a ferroelectric perovskite lattice: Electron paramagnetic resonance analysis of Mn2+ in single crystal BaTiO3", Journal of Applied Physics, 118, (16)
  • Mark A Anders, Patrick M Lenahan and Aivars J Lelis, 2015, "Negative Bias Instability in 4H-SiC MOSFETS:"
  • M A Anders, Patrick M Lenahan, C J Cochrane and A J Lelis, 2015, "Relationship Between the 4H SiC/SiO2 Interface Structure and Electronic Properties Explored by Electrically Detected Magnetic Resonance", IEEE Transactions on Electron Devices, 62, (2), pp. 301-308
  • C J Cochrane, M A Anders, M Mutch and Patrick M Lenahan, 2014, "Quantitative Electrically Detected Magnetic Resonance for Device Reliability Studies", pp. 6-9
  • M A Anders, Patrick M Lenahan, J Follman, S D Arthur, J McMahon, L Liu, X Zhu and A J Lelis, 2014, "Electrically Detected Magnetic Resonance Study of NBTI in 4-H SiC MOSFETs", pp. 16-19
  • , T A Pomor andki, , 2014, "Defect Structure and Electronic Propertiers of SiOCHFilms Used for Back End of the line dielectrics", Journal of Applied Physics
  • J P Campbell and Patrick M Lenahan, 2014, Chapter 8, Atomic Scale Defects Associated With The Negaitive Bias Temperature Instability, Springer, New York, Heidelberg, pp. 177-228
  • T A Pomorski, B A Bittel, Patrick M Lenahan, E Mays, C Edge, J Bielefield, D Michalek and S W King, 2014, "Defect Structure and Electronic Properties of SiOC:H Films Used for Back End of the Line", Journal of Applied Physics, 115, (234508)
  • C J Cochrane and Patrick M Lenahan, 2014, "Spin Counting in Electrically Detected Magnetic Resonance Via Low Field Defect State Mixing", Applied Physics Letters, 104, pp. 093503
  • C. J. Cochrane and Patrick M Lenahan, 2013, "Detection of Interfacial Pb Centers in Si/SiO2 Metal-Oxide -Semiconducting Field Effect Transistors Via Zero-Field Spin Dependent Recombination With Observation of Precursor Pair Spin-Spin Interactions", Applied Physics Letters, 103, (053506)
  • C. J. Cochrane and Patrick M Lenahan, 2013, "The effect of nitric oxide anneals on silicon vacancies at and very near the interface of 4H SiC metal oxide semiconductor field effect transistors using electrically detected magnetic resonance", Applied Physics Letters, 102, (193507)
  • T. A. Pomorski, B. C. Bittel, C. J. Cochrane, Patrick M Lenahan, J. Bielenield and S. W. King, 2013, "Defects and electronic transport in hydrogenated amorphous SiC films of interest for low dielectric constant back end of the line dielectric systems", Journal of Applied Physics, 114, (074501)
  • B. R. Tuttle, T. Aichinger, Patrick M Lenahan and S. T. Panteleides, 2013, "Theory of hyperfine active nitrogen complexes observed in 4H-SiC diodes", Journal of Applied Physics, 114, (113712)
  • T. Aichinger, Patrick M Lenahan and P. Dethard, 2013, "Interface defects and negative bias temperature instabilities in 4H SiC pMOSFETs: a combined DCIV and SDR study", Materials Sciuence Forum, 740-742, pp. p. 529
  • M. Pigott, L. Young, Patrick M Lenahan, A. Halverson, K. W. Andreani and B. A. Korevar, 2013, "Electron Paramagnetic Resonance as aProbe of Technologivcally Relevant Processing Effects on CdTe Solar Cell materials", Proceedings of the 39th IEEE Photovoltaics Conference, 0635
  • C. J. Cochrane and Patrick M Lenahan, 2012, "Zero-field detection of spin dependent recombination with direct observation of electron nuclear hyperfine interactions in the absence of an oscillating electromagnetic field", JOURNAL OF APPLIED PHYSICS, 112, (12)
  • C. J. Cochrane and Patrick M Lenahan, 2012, "Zero Field Spin Dependent Transport in the Absence of an Oscillation Magnetic Field: A Means to Study Reliability Based Defects in Fully Processed Devices", Proceedings of the 2012 IEEE International Integrated Reliability Workshop, pp. 45-47
  • Thomas Aichinger and Patrick M Lenahan, 2012, "Giant amplification of spin dependent recombination at heterojunctions through a gate controlled bipolar effect", APPLIED PHYSICS LETTERS, 101
  • Thomas Aichinger, Patrick M Lenahan and Tibor Grasser, 2012, "Evidence for P-b center-hydrogen complexes after subjecting PMOS devices to NBTI stress - a combined DCIV/SDR study", IEEE International Reliability Physics Symposium (IRPS)
  • Thomas Aichinger, Patrick M Lenahan and Blair R. Tuttle, 2012, "A nitrogen-related deep level defect in ion implanted 4H-SiC pn junctions-A spin dependent recombination study", APPLIED PHYSICS LETTERS, 100
  • C. J. Cochrane, Patrick M Lenahan and A. J. Lelis, 2012, "Identification of a silicon vacancy as an important defect in 4H SiC metal oxide semiconducting field effect transistor using spin dependent recombination", APPLIED PHYSICS LETTERS, 100
  • C. J. Cochrane, Patrick M Lenahan and A. J. Lelis, 2012, "Definitive Identification of an Important 4H SiC MOSFET Interface/Near Interface Trap", Materials Science Forum, 717-720, pp. 433-436
  • B. C. Bittel, Patrick M Lenahan and J. T. Ryan, 2011, "Spin dependent charge pumping in SiC metal-oxide-semiconductor field-effect-transistors", Applied Physics Letters, 99
  • Patrick M Lenahan, J. Campbell and A. Krishnan, 2011, "A Model for NBTI in Nitrided Oxide MOSFETs which does not involve hydrogen or diffusion", IEEE Transactions on Device and Material Reliability, 11, pp. 219-226
  • E. Lipp, Z. Shahar, B. C. Bittel, Patrick M Lenahan, D. Schwendt, H. J. Osten and M. Eizenberg, 2011, "Trap-assisted conduction in Pt-gated Gd203/Si capacitors", Journal of Applied Physics, 109, pp. 073724
  • A. J. Stevenson, B. C. Bittel, C. G. Leh and Patrick M Lenahan, 2011, "Color center formation in vacuum sintered Nd3xY3-3xAl5O12transparent ceramics", Applied Physics Letters, 98, pp. 051906
  • C. J. Cochrane, Patrick M Lenahan and A. J. Lelis, 2011, "An electrically detected magnetic resonance study of performance limiting defects in SiC metal oxide semiconductor field effect transistors", Journal of Applied Physics, 109, pp. 014506
  • Patrick M Lenahan, C. J. Cochrane, J. P. Campbell and J. Y. Ryan, 2011, "Electrically Detected Magnetic Resonance in Dielectric Semiconductor Systems of Current Interest", Electrochemical Society Transactions, 35, (4), pp. 605-627
  • B. C. Bittel, Patrick M Lenahan, T. A. Pomorski and S. W. King, 2011, "Electron Spin Resonance Studies of Interlayer Dielectrics", IEEE International Integrated Reliability Workshop Final Report (This is the conference proceedings)
  • B. C. Bittel, Patrick M Lenahan, J. T. Ryan, J. Fronheiser and A. J. Lelis, 2011, "Spin Dependent Charge Pumping:A New Tool for Reliability Studies", IEEE International Integrated Reliability Workshop Final Report (This is the conference proceedings)
  • J. T. Ryan, Patrick M Lenahan, A. T. Krishnan and S. Krishnan, 2010, "Energy resolved spin dependent tunneling in nanometer scale dielectrics", Journal of Applied Physics, 108, pp. 064511
  • B. C. Bittel, Patrick M Lenahan and S. W. King, 2010, "Ultraviolet radiation effects on paramagnetic defects in low kappa dielectrics for ultra large scale integrated circuit interconnects", Applied Physics Letters, 97, pp. 063506
  • J. T. Ryan, Patrick M Lenahan and T. Grasser, 2010, "Observations of negative bias instability defect generation via on the fly electron spin resonance", Applied Physics Letters, 96, pp. 223509
  • J. T. Ryan, Patrick M Lenahan, T. Grasser and H. Enichlmar, 2010, "Recovery free electron spin resonance observation of NBTI degradation", Proceedings of the IEEE International Reliability Physics Symposium
  • B. C. Bittel, T. A. Pomarski, Patrick M Lenahan and S. King, 2010, "Defects in low -k dielectrics and etch stop layers for use as interlayer dielectrics in ULSI", Proceedings of the 2011 IEEE International Integrated Reliability Workshop ( The Final Report) IEEE catalog number CFP10 IRW -PRT, pp. 42-45
  • C. J. Cochrane and Patrick M Lenahan, 2010, "Adaptive Signal Averaging Technique That Reduces the Acquisition Time of Continuous Wave Magnetic Resonance Experiments", EPR Newsletter, 19, (4), pp. 10-11
  • B. C. Bittel, Patrick M Lenahan and S. King, 2010, "Reliability and performance limiting defects in low-k dielectrics for use as interlayer dielectrics", Proceedings of the IEEE International Reliability Physics Symposium, pp. IC13.1-IC13.4
  • Patrick M Lenahan, 2010, "Origin of the flatband rolloff phenomenon in metal/high -k gate stacks", IEEE Transactions on Electron Devices, 57, pp. 2047-2056
  • J. T. Ryan, Patrick M Lenahan and A. T. Krishnan, 2009, "Energy resolved spin dependent tunneling in 1.2 nm dielectrics", APPLIED PHYSICS LETTERS, 95, (10)
  • C. J. Cochrane, Patrick M Lenahan and A. J. Lelis, 2009, "Direct observation of lifetime killing defects in 4H SiC epitaxial layers through spin dependent recombination in bipolar junction transistors", Journal of Applied Physics, 105, (6)
  • C. J. Cochrane, Patrick M Lenahan and A. J. Lelis, 2009, "Direct Observation of Lifetime Killing Defects in 4H SiC Epitaxial Layers via Spin Dependent Recombination in Transistors", Materials Science Forum, 615-617, pp. 299-302
  • C. J. Cochrane, Patrick M Lenahan and A. J. Lelis, 2009, "Electrically Detected Magnetic Resonance Studies of Processing Variations in 4H SiC Based MOSFETs", Materials Science Forum, 600-603, pp. 719-722
  • C. J. Cochrane, B. C. Bittel, Patrick M Lenahan, J. Fronheiser, K. Matocha and A. Lelis, 2009, "EDMR and EPR Studies of 4H SiC MOSFETs and Capacitors", Materials Science Forum, 645-648, pp. 527-530
  • J. T. Ryan, Patrick M Lenahan, A. T. Krishnan and S. Krishnan, 2009, "Investigation of SILC via Energy Resolved Spin Dependent Tunneling Spectroscopy", IEEE International Integrated Reliability Workshop Proceedings ( The Final Report) IEEE Catalog number: CFP09 IRW-PRT, pp. 1-4
  • J. T. Ryan, Patrick M Lenahan, T. Grasser and H. Enichlmair, 2009, "What Triggers NBTI? An "On The Fly" Electron Spin Resonance Approach", IEEE International Integrated Reliability Workshop Proceedings (The Final Report) IEEE Catalog number: CFP09 IRW-PRT, pp. 42-45
  • J. T. Ryan, Patrick M Lenahan, A. T. Krishnan and S. Krishnan, 2009, "Spin Dependent Recombination Study of the Atomic -Scale Effects of Flourine on the Negative Bias Temperature Instability", Proceedings of the 2009 IEEE International Reliability Physics Symposium, IEEE CFP09RPS-CDR, pp. 988-991
  • Patrick M Lenahan, 2009, "A Radically Different Model for NBTI in nitridedoxide MOSFETs", IEEE International Integrated Reliability Workshop Proceedings ( The Final Report) IEEE Catalog number: CFP09 IRW-PRT, pp. 90-92
  • Patrick M Lenahan, 2008, Dominating Defects in the Si/SiO2 System, CRC Handbook
  • J. P. Campbell, Patrick M Lenahan, A. T. Krishnan and S. Krishnan, 2008, "Identification of Atomic Scale Defects Involved in the Negative Bias Instability in Plasma Nitrided pMOSFETs", Journal of Applied Physics, 103, pp. 044505
  • J. T. Ryan, Patrick M Lenahan, A. T. Krishnan and S. Krishnan, 2008, "An Electrically Detected Magnetic Resonance Study of the Atomic Scale Effects of Flourine on the Negative Bias Temperature Instability", IEEE International Integrated Reliability Workshop Final Report, pp. 137-140
  • J. T. Ryan and Patrick M Lenahan, 2008, "Interfacial Layer Defects and Instabilities in HfO2 MOS Structures", Proceedings of the IEEE International Reliability Physics Symposium, pp. 665-666
  • G. Bersuker, D. Heh, C. D. Young, H. Park, P. Khanal, L. Larcher, A. Padovani, Patrick M Lenahan, J. T. Ryan, B. H. Lee, H. Tseng and R. Jammy, 2008, "Breakdown in the Metal/High -k Gate Stack: Identifying the Weak Link in the Multilayer Dielectric", IEEE International Electron Devices Meeting Technical Digest, pp. 791-794
  • Patrick M Lenahan, 2008, Dominating Defects in the MOS System: Pb and E' Centers, CRC Press, pp. Ch. 6, 163-214
  • C. J. Cochrane, Patrick M Lenahan and A. J. Lelis, 2008, "Interface traps in SiC MOSFETs", IEEE International Integrated Reliability Workshop, pp. 68-71
  • C. J. Cochrane and Patrick M Lenahan, 2008, "Real Time Exponentially Weighted Recursive Least Squares Adaptive Signal Averaging For Enhancing the Sensitivity of Continuous Wave Magnetic Resonance", Journal of Magnetic Resonance, 195, (1), pp. 17-22
  • J. T. Ryan, Patrick M Lenahan, J. Robertson and G. Bersuker, 2008, "Direct observation of electrically active interfacial layer defects which may cause threshold voltage instabilities in HfO2 based metal-oxide-silicon field effect transistors", Applied Physics Letters, 92, (12)
  • J. P. Campbell, Patrick M Lenahan, A. T. Krishnan and S. Krishnan, 2008, "Identification of the atomic scale defects involved in the negative bias temperature instability in plasma nitrided p-channel metal-oxide -silicon field effect transistors", Journal of Applied Physics, 103, (4)
  • Patrick M Lenahan, B. Knowlton and J. F. Conley, 2008, "Introduction to the Special Issue on the 2007 International Integrated Reliability Workshop", IEEE Transactions on Device and Materials Reliability, 8, (3), pp. p. 490
  • J. P. Campbell, Patrick M Lenahan, C. J. Cochrane, A. T. Krishnan and S. Krishnan, 2007, "Atomic-scale defects involved in the negative-bias temperature instability", IEEE Trans. Device and Materials Reliability, 7, pp. 540-557
  • J. P. Campbell, Patrick M Lenahan, A. T. Krishnan and S. Krishnan, 2007, "Identification of atomic-scale defect structure involved in the negative bias temperature instability in plasma-nitrided devices", Applied Physics Letters, 91
  • Patrick M Lenahan, 2007, "Deep level defects involved in MOS device instabilities", Microelectronics Reliability, 47, (6), pp. 890-898
  • J. T. Ryan, Patrick M Lenahan, G. Bersuker and P. Lysaght, 2007, "Electron spin resonance observations of oxygen deficient silicon atoms in the interfacial layer of hafnium oxide based metal-oxide-silicon structures", Applied Physics Letters, 90, pp. 173513
  • C. J. Cochrane, Patrick M Lenahan and A. J. Lelis, 2007, "Deep level defects which limit current gain in 4H SiC bipolar junction transistors", Applied Physics Letters, 90, pp. 123501
  • C. J. Cochrane, Patrick M Lenahan, J. P. Campbell, G. Bersuker and A. Neugroschel, 2007, "Observation of negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination", Applied Physics Letters, 90, pp. 123502
  • J. P. Campbell, Patrick M Lenahan, A. T. Krishnan and S. Krishnan, 2007, "Location Structure and Density of States of NBTI- InducedDefects in Plasma -Nitrided pMOSFETs", Proceedeings of the 2007 IEEE International Reliability Physics Symposium, pp. 503-510
  • J. P. Campbell, Patrick M Lenahan, A. T. Krishnan and S. Krishnan, 2007, "Atomic Scale Defects Involved in NBTI in Plasma Nitrided pMOSFETs", Proceedings of the 2007 IEEE International Integrated Reliability Workshop ( Final Report), pp. 12-17
  • J. T. Ryan and Patrick M Lenahan, 2007, "Direct Observation of Electrically Active Interfacial Layer Defects Which May Cause Threshold Voltage Instabilities in HfO2 Based MOSFETs", Proceedings of the 2007 IEEE International Integrated Reliability Workshop ( Final Report), pp. 107-110
  • M. S. Dautrich, Patrick M Lenahan and A. J. Lelis, 2006, "Identification of Trapping Defects in 4H-Silicon Carbide Metal-Insulator-Semiconductor Field Effect Transistors by Electrically Detected Magnetic Resonance", Applied Physics Letters, 89, (22), pp. 223502
  • Patrick M Lenahan, N. T. Pfeffenberger, T. G. Pribicko and A. J. Lelis, 2006, "Identification of Deep Level Defects in SiC Bipolar Junction Transistors", Materials Science Forum, 527-529, pp. 567-570
  • M. S. Dautrich, Patrick M Lenahan and A. J. Lelis, 2006, "Observation of Deep Level Centers in 4H - Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors by Spin Dependent Recombination", Materials Science Forum, 527-529, pp. 1011-1014
  • G. Bersuker, C. S. Park, J. Barnett, P. S. Lysaght, P. D. Kirsch, C. D. Young, R. Choi, B. H. Lee, B. Foran, K. van Benthem, S. J. Penneycock, Patrick M Lenahan and J. T. Ryan, 2006, "The effect of interfacial layer properties on the performance of Hf based gate stack devices", Journal of Applied Physics, 100, (9), pp. 094108
  • J. P. Campbell, Patrick M Lenahan, A. T. Krishnan and S. Krishnan, 2006, "Negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination", Proceedings IEEE International Reliability Physics Symposium
  • C. J. Cochrane, Patrick M Lenahan, J. P. Campbell, G. Bersuker, P. Lysaght and A. Neugroschel, 2006, "Negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination", Proceedings IEEE International Integrated Reliability Workshop
  • J. P. Campbell, Patrick M Lenahan, A. T. Krishnan and S. Krishnan, 2006, "Observation of NBTI-Induced Atomic Scale Defects", IEEE Trans. on Device and Materials Reliability, 6, (117)
  • J. T. Ryan, Patrick M Lenahan, A. Y. Kang, J. F. Conley, G. Bersuker and P. Lysaght, 2005, "Identification of the atomic scale defects involved in radiation damage in HfO2 based MOS devices", IEEE Transactions on Nuclear Science, 52, (6), pp. 2272-2275
  • P. J. Campbell, Patrick M Lenahan, A. T. Krishnan and S. K. Krishnan, 2005, "Direct observation of the structure of defect centers involved in the negative bias temperature instability", Applied Physics Letters, 87, (20)
  • T. G. Pribicko, J. P. Campbell, Patrick M Lenahan and W. Tsai, 2005, "Interface defects in Si/HfO2 based metal-oxide-semiconductor field effect transistors", Applied Physics Letters, 86, (17)
  • J. F. Conley, G. Bersuker and Patrick M Lenahan, 2005, "Introduction to the special issue on high -k dielectric reliability", IEEE Transactions on Device and Materials Reliability, 5, (1), pp. 3
  • Patrick M Lenahan and J. F. Conley, 2005, "Magnetic resonance studies of trapping centers in high-k dielectric films on silicon", IEEE Transactions on Device and Materials Reliability, 5, (1), pp. p. 90
  • D. J. Meyer, Patrick M Lenahan and A. J. Lelis, 2005, "Observation of trapping defects in 4H - silicon carbide metal - oxide - semiconductor field effect transistors by spin dependent recombination", Applied Physics Letters, 86, (2)
  • J. P. Campbell, Patrick M Lenahan, A. T. Krishnan and S. Krishnan, 2005, "Observations of NBTI-Induced Atomic Scale Defects", IEEE International Integrated Reliability Workshop, pp. 1-4
  • D. J. Meyer, M. S. Dautrich, Patrick M Lenahan and A. J. Lelis, 2005, "Observation of deep level centers in 4H and 6H silicon carbide metal oxide semiconductor field effect transistors", Materials Science Forum, 483, pp. p. 593
  • C. J. Cochrane, Patrick M Lenahan and A. J. Lelis, , "Electrically Detected Magnetic Resonance Studies of Variously Processed 4H-SiC MOSFETs", Materials Science Forum
  • Mark A Anders, Patrick M Lenahan and Aivars J Lelis, , "A Surprising Result: ‘Bulk’ SiC Defects in the Negative Bias Instability in 4H-SiC MOSFETs", Materials Science Forum
  • J. T. Ryan, Patrick M Lenahan, A. T. Krishnan and S. Krishnan, , "Spin Dependent Recombination Study of the Atomic Scale Defects of Flourine on the Negative Bias Temperature Instability"
  • Michael Mutch, Patrick M Lenahan and Sean King, , ""Defect Chemistry and Electronic Transport in Low-? Dielectrics Studied with Electrically Detected Magnetic Resonance"", Journal of Applied Physics
  • Corey J Cochrane, Jordana Blacksburg and Patrick M Lenahan, , "Magnetic Field Sensing with Atomic Scale Defects in SiC Devices", Materials Science Forum
 

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The Penn State Department of Engineering Science and Mechanics (ESM) is an internationally distinguished department that is recognized for its globally competitive excellence in engineering and scientific accomplishments, research, and educational leadership.

Our Engineering Science program is the official undergraduate honors program of the College of Engineering, attracting the University’s brightest engineering students. We also offer graduate degrees in ESM, engineering mechanics, engineering at the nano-scale, and an integrated undergraduate/graduate program.

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