Photo of Saptarshi Das

Saptarshi Das

Assistant Professor

Affiliation(s):

  • Engineering Science and Mechanics

N-333 Millennium Science Complex

sud70@psu.edu

814-863-2639

Personal or Departmental Website

Research Areas:

Advanced Materials and Devices

Interest Areas:

 
 

 

Education

  • BE, Jadavpur University, 2007
  • Ph D, Micro and Nanoelectronics, Purdue University, 2013

Publications

Journal Articles

  • Daniel S Schulman, Andrew J Arnold, Ali Razavieh, Joseph R Nasr and Saptarshi Das, 2017, "A Review of Two Dimensional Heterostructures", IEEE Nanotechnology Magazine, 11, (2)
  • Andrew J Arnold, Ali Razavieh, Joseph R Nasr, Daniel S Schulman, Chad M Eichfeld and Saptarshi Das, 2017, "Mimicking Neurotransmitter Release in Chemical Synapses via Hysteresis Engineering in MoS2 Transistors", ACS Nano, 11, (3)
  • Saptarshi Das, 2016, "Two Dimensional Electrostrictive Field Effect Transistor (2D-EFET): A sub-60mV/decade Steep Slope Device with High ON current", Scientific Reports, 6, (34811)
  • Saptarshi Das, Mrinal K Bera, Sheng Tong, Badri Narayanan, Ganesh Kamath, Anil Mane, Arvydas P Paulikas, Mark R Antonio, Subramanian Sankaranarayanan and Andreas Roelofs, 2016, "A Self-Limiting Electro-Ablation Technique for the Top-Down Synthesis of Large-Area Monolayer Flakes of 2D Materials", Scientific Reports, 6, (28195)
  • Y L Wang, L R Thoutam, Z L Xiao, J Hu, Saptarshi Das, J Q Mao, J Wei, R Divan, A Luican-Mayer, G W Crabtree and W K Kwok, 2015, "Origin of the turn-on temperature behavior in WTe 2", Physical Review B, 92, (18), pp. 180402
  • Ganesh R Bhimanapati, Zhong Lin, Vincent Meunier, Yeonwoong Jung, Judy Cha and Saptarshi Das, 2015, "Recent Advances in Two-Dimensional Materials beyond Graphene", ACS Nano, 9, (12), pp. 11509–11539
  • L R Thoutam, Y L Wang, Z L Xiao, Saptarshi Das, A Luican-Mayer, R Divan, G W Crabtree and W K Kwok, 2015, "Temperature-Dependent Three-Dimensional Anisotropy of the Magnetoresistance in WTe2", Physical Review Letters, 115, (4), pp. 046602
  • Saptarshi Das, Joshua A Robinson, Madan Dubey, Humberto Terrones and Mauricio Terrones Maldonado, 2015, "Beyond graphene: Progress in novel two-dimensional materials and van der waals solids", Annual Review of Materials Research, 45, pp. 1-27
  • Saptarshi Das, Wei Zhang, Laxman Raju Thoutam, Zhili Xiao, Axel Hoffmann, Marcel Demarteau and Andreas Roelofs, 2015, "A Small Signal Amplifier Based on Ionic Liquid Gated Black Phosphorous Field Effect Transistor", IEEE Electron Device Letters, 36, (6), pp. 621-623
  • Saptarshi Das, Marcel Demarteau and Andreas Roelofs, 2015, "Nb-doped single crystalline MoS2 field effect transistor", Applied Physics Letters, 106, (17), pp. 173506
  • Suprem R Das, Jiseok Kwon, Abhijith Prakash, Collin J Delker, Saptarshi Das and David B Janes, 2015, "Low-frequency noise in MoSe2 field effect transistors", Applied Physics Letters, 106, (8), pp. 083507
  • Saptarshi Das, Marcel Demarteau and Andreas Roelofs, 2014, "Ambipolar Phosphorene Field Effect Transistor", ACS Nano, 8, (11), pp. 11730–11738
  • Saptarshi Das, Wei Zhang, Marcel Demarteau, Axel Hoffmann, Madan Dubey and Andreas Roelofs, 2014, "Tunable transport gap in phosphorene", Nano Letters, 14, (10), pp. 5733-5739
  • Richard Gulotty, Saptarshi Das, Yuzi Liu and Anirudha V Sumant, 2014, "Effect of hydrogen flow during cooling phase to achieve uniform and repeatable growth of bilayer graphene on copper foils over large area", Carbon, 77, pp. 341-350
  • Saptarshi Das, Madan Dubey and Andreas Roelofs, 2014, "High gain, low noise, fully complementary logic inverter based on bi-layer WSe2 field effect transistors", Applied Physics Letters, 105, (8), pp. 083511
  • Ali Razavieh, Parsian Katal Mohseni, Kyooho Jung, Saumitra Mehrotra, Saptarshi Das, Sergey Suslov, Xiuling Li, Gerhard Klimeck, David B Janes and Joerg Appenzeller, 2014, "Effect of Diameter Variation on Electrical Characteristics of Schottky Barrier Indium Arsenide Nanowire Field-Effect Transistors", ACS Nano, 6, (8), pp. 6281-6287
  • Saptarshi Das, Richard Gulotty, Anirudha V Sumant and Andreas Roelofs, 2014, "All two-dimensional, flexible, transparent, and thinnest thin film transistor", Nano Letters, 14, (5), pp. 2861-2866
  • Saptarshi Das, Abhijith Prakash, Ramon Salazar and Joerg Appenzeller, 2014, "Toward Low-Power Electronics: Tunneling Phenomena in Transition Metal Dichalcogenides", ACS Nano, 8, (2), pp. 1681-1689
  • Saptarshi Das and Joerg Appenzeller, 2013, "WSe2 field effect transistors with enhanced ambipolar characteristics", Applied Physics Letters, 103, (10), pp. 103501
  • Saptarshi Das and Joerg Appenzeller, 2013, "Where Does the Current Flow in Two-Dimensional Layered Systems?", Nano Letters, 13, (7), pp. 3396–3402
  • Saptarshi Das and Joerg Appenzeller, 2013, "Screening and interlayer coupling in multilayer MoS2", physica status solidi (RRL)-Rapid Research Letters, 7, (4), pp. 268-273
  • Saptarshi Das, Hong-Yan Chen, Ashish Verma Penumatcha and Joerg Appenzeller, 2013, "High Performance Multi-layer MoS2 Transistors with Scandium Contacts", Nano Letters, 13, (1), pp. 100-105
  • Saptarshi Das and Joerg Appenzeller, 2012, "On the scaling behavior of organic ferroelectric copolymer PVDF-TrFE for memory application", Organic Electronics, 13, (12), pp. 3326-3332
  • Joshua T Smith, Saptarshi Das and Joerg Appenzeller, 2011, "Broken-Gap Tunnel MOSFET: A Sub-60mV/decade Transistor with a Constant Inverse Subthreshold Slope", IEEE Electron Device Letters, 32, (10), pp. 1367-1369
  • Saptarshi Das and Joerg Appenzeller, 2011, "On the importance of bandgap formation in graphene for analog device applications", IEEE Transactions on Nanotechnology, 10, (5), pp. 1093-1098
  • Saptarshi Das and Joerg Appenzeller, 2011, "FETRAM-An Organic Ferroelectric Material Based Novel Random Access Memory Cell", Nano Letters, 11, (9), pp. 4003-4007
  • Joshua T Smith, Christian Sandow, Saptarshi Das, Renato A Minamisawa, Siegfried Mantl and Joerg Appenzeller, 2011, "Silicon Nanowire Tunneling Field-Effect Transistor Arrays: Improving Subthreshold Performance Using Excimer Laser Annealing", IEEE Transaction on Electron Device, 58, (7), pp. 1822 - 1829

Research Projects

  • October 2016 - September 2019, "E2CDA: Type II: 2D Electrostrictive FETs for Ultra-Low Power Circuits and Architectures," (Sponsor: National Science Foundation (NSF)).
  • October 2016 - September 2019, "E2CDA: Type II: 2D Electrostrictive FETs for Ultra-Low Power Circuits and Architectures," (Sponsor: Nanoelectronics Research Corporation (SRC/NRI)).
  • January 2017 - December 2019, "YIP: Investigation of Scalability and Reliability of Contacts to Two Dimensional Layered Semiconductors," (Sponsor: Air Force Office of Scientific Research (AFOSR)).
  • July 2017 - March 2018, "Excitonic Devices based on 2D Heterostructures for Room Temperature Superconductivity," (Sponsor: Army Research Office (ARO)).
  • June 2016 - February 2017, "Graphene/2D materials growth and properties on Corning substrates," (Sponsor: Corning Incorporation).
  • January 2016 - June 2016, "Electrochemical Synthesis of 2D Nanosheets," (Sponsor: Argonne National Laboratory (DOE/ANL)).

Honors and Awards

  • Young Investigator Award, Air Force Office of Scientific Research, February 2017 - January 2020

Service

Service to Penn State:

  • Member, Kazakhstan task force, January 2017
  • Committee Member, ABET Thesis, August 2016
  • Committee Member, Candidacy Exam Committee: Materials, August 2016
  • Committee Member, Scholarships and Awards, August 2016
  • Committee Member, Undergraduate Curriculum: Materials, August 2016
  • Member, Faculty Seneate, August 2016
  • Reviewer, Schreyer Honors College Selection Committee, January 2017
  • Faculty Advisor, Innovation Studio, December 2016
  • Judge, ESM Today, January 2016

Service to External Organizations:

  • Organizer, Focus Topic Organizer, American Physical Society, March 2016
  • , Organizer and Technical Committee Member, Carbon, July 2016
  • Speaker, US-China Collaboration, Grapchina, September 2016
  • Judge, Poster Presentation Judge, IWFPE, November 2016
 


 

About

The Penn State Department of Engineering Science and Mechanics (ESM) is an internationally distinguished department that is recognized for its globally competitive excellence in engineering and scientific accomplishments, research, and educational leadership.

Our Engineering Science program is the official undergraduate honors program of the College of Engineering, attracting the University’s brightest engineering students. We also offer graduate degrees in ESM, engineering mechanics, engineering at the nano-scale, and an integrated undergraduate/graduate program.

Department of Engineering Science and Mechanics

212 Earth and Engineering Sciences Building

The Pennsylvania State University

University Park, PA 16802

Phone: 814-865-4523