• BS, Physics, Imperial College of Science and Technology, 1981
• MS, Solid State Physics, Khartoum University, 1984
• MS, Electrical Engineering, Southern Illinois University, 1995
• Ph D, Engineering Science, The Pennsylvania State University, 2002

Journal Articles

Amartya K Ghosh, Jifa Hao, Michael Cook, Samia A Suliman, Xinyu Wang and Osama Awadelkarim, 2022, "Threshold-voltyage bias-instability in SiC MOSFETs:Effect of stress temperature and level on ovide charge buildup and recovery", Semiconductor Science and Technology, 37, (075015)

Amartya Ghosh, 2022, "Threshold-voltage bias-instability in SiC MOSFETs; effect of stress temperature and level on oxide charge and recovery’", Semiconductor Science and Technology, 37 (7), (07501510)

J. Hao, M Rioux, Samia A Suliman and Osama O Awadelkarim, 2014, "High Temperature Bias-Stress Induced Instability in Power Trench-Gated MOSFET Transistor", Microelectronics Reliability, 54, (2), pp. 374-380

K. Sarpatwar, L. J. Passmore, Samia A Suliman and O. O. Awadelkarim, 2007, "The analysis of current-voltage-temperature characterization in SiC Schottky diodes using threshold-accepting simulated-annealing technique", Solid State Electronics, 51, (5), pp. 644-649

Karthik Sarpatwar, Lucas Passmore, Samia A Suliman and Osama Awadelkarim, 2007, "Analysis of current-voltage-temperature characteristics in SiC Schottky diodes using threshold-accepting simulated-annealing techniques", Solid-State Electronics, 51, (5), pp. 644-649

Lucas Passmore, Karthik Sarpatwar, Samia A Suliman and Osama Awadelakrim, 2005, "Modified three terminal charge pumping technique applied to vertical transistor structures"

Samia A Suliman, Osama O Awadelkarim, R Ridley and G Donley, 2004, "Gate-oxide grown on the sidewalls and base of U-shaped Si trench: Effects of the oxide and oxide /Si interface condition on the properties of vertical MOS devices", 72, (1-4), pp. 247-252

Samia A Suliman, Osama Awadelakarim, Stephen Fonash, B. Venkataraman, Chuntao Wu, R. S. Ridley, G. M. Dolny, Osama O Awadelkarim and Jerzy Ruzyllo, 2003, "Electrical properties of the gate oxide and its interface with Si in U-shaped trench MOS capacitors: The impact of polycrystalline Si doping and oxide composition", Solid-State Electronics, 47, (5), pp. 899-905

Samia A Suliman, Osama Awadelkarim, Stephen Fonash, R. S. Ridley, G. M. Dolny, J. Hao and C. M. Knoedler, 2002, "Electron and hole trapping in the bulk and interface with Si of a thermal oxide grown on the sidewalls and base of a U-shaped silicon trench", Solid-State Electronics, 46, (6), pp. 837-845

Samia A Suliman, N Gollagunta, L Trabz, J Hao, R S Ridley, C M Knoedler, G M Dolny, Osama O Awadelkarim and Stephen J Fonash, 2001, "The dependence of UMOSFETs characteristics and reliability on geometry and processing", 16, (6), pp. 447-454

Samia A Suliman, Osama O Awadelkarim, Stephen J Fonash, G. M. Dolny, J. Hao, R. S. Ridley and C. M. Knoedler, 2001, "The effects of channel boron-doping on the performance and hot electron reliability of N-channel trench UMOSFETs", Solid-State Electronics, 45, (5), pp. 655-661

Samia A Suliman, 2001, "The effects of channel boron-doping on the performance and reliability of N-channel trench UMOSFETs"

Osama O Awadelkarim, Samia A Suliman and Bo Monemar, 1990, "Defect states in carbon and oxygen implanted p-type silicon", JOURNAL OF APPLIED PHYSICS, 67, (1), pp. 270-275

Osama Awadelkarim, Samia A Suliman and Bo Monemar, 1989, "On the 0.34 eV hole trap in irradiated boron-doped silicon", RADIATION EFFECTS AND DEFECTS IN SOLIDS, 112, (1-2), pp. 273-280

Conference Proceedings

Samia A Suliman and Amar Amartya Ghoush, 2022, "Comparison of AC and DC BTI in SiC MOSFETs", 2022 IEEE IRPS ( International Relibility Physics Symposium)

Samia A Suliman and Amar Amartya Ghoush, 2020, "Studies of Bias Temperature Instabilities in 4H-SiC DMOSFETs", 2020 IEEE IRPS (International Relibility Physics Symposium)

Samia A Suliman, Osama O Awadelkarim, J Hao and M Rioux, 2014, "High-Temperature Reverse- Bias stressing of thin Oxide in Power Transistors", Conference: 12th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics held during the 226th Meeting of The Electrochemical-Society Location: Cancun, MEXICO Date: OCT 05-10, 2014

Clifford Lissenden, Christine Masters and Samia A Suliman, 2011, "Supplemental learning tools for Statics and Strength of Materials"

Osama O Awadelkarim, J. Jiang, Samia A Suliman, K. Sarpatwari, Lucas Passmore, David Lee, P. Roman and Jerzy Ruzyllo, 2007, "Electrical studies on metal / SrTa2O6 or TiO2/Si substrate stack system", 9, (1), pp. 353-362

Samia A Suliman, 2006, "The properties of Si/SiO2 interfaces in Vertical trench UMOSFETS; Silicon-Based Novel Structures and Devices", Shanghai-China

Lucas Passmore, K. Sarpatwari, Samia A Suliman, Osama O Awadelkarim, R. Ridley, G. Dolny, J. Michalowicz, Chuntao Wu, Karthik Sarpatwar, Samia A Suliman and Osama Awadelakrim, 2006, "Fowler-Nordheim and hot carrier reliabilities of U-shaped trench-gated transistors studied by three terminal charge pumping", 504, (1-2), pp. 302-306

Samia A Suliman, 2006, "Properties of Si/SiO2Interfaces in Vertical Trench MOSFETs", IEEE, International Workshop on Junction Technology, 2006, IWJT '06, pp. 225-228

K Sarpatwari, L J Passmore, Samia A Suliman and Osama O Awadelkarim, 2006, "Current- voltage characteristics and charge-carrier traps in n-type 4H-SiC Schottky structures", The 6th International Workshop on Junction Technology, Shanghai-China Session: Heterojunction Device and Contact, Shanghai, China

O O Awadelkarim and Samia A Suliman, 2005, "On the Reliability of U-Shaped Trench-Gated Metal- Oxide Silicon Field-Effect Transistors", V. Kumar, S. K. Agrawal, and S. N. Singh, Allied Publishers Pvt. Ltd, New Delhi, India, pp. 796-803

Lucas Passmore, K. Sarpatwari, Samia A Suliman, Osama O Awadelkarim, R. Ridley, G. Dolny, J. Michalowicz and Chuntao Wu, 2005, "Modified three terminal charge pumping technique applied to vertical transistor structures", 23, (5), pp. 2189-2193

Samia A Suliman, Stephen Fonash, Osama Awadelkarim, N. Gallogunta, L. Trabzon, J. Hao, G. Dolny, R. Ridley, T. Grebs, J. Benjamin, C. Kocon, J. Zeng, C. M. Knoedler, Osama O Awadelkarim, Stephen J Fonash and Jerzy Ruzyllo, 2002, "The impact of trench geometry and processing on performance and reliability of low voltage power UMOSFETs", Published in: 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167), 2001-January, pp. 308-314

C Wu, Samia A Suliman, Osama Awadelakrim and Jerzy Ryzyllo, 2002, "Growth and reliability of thick gate oxide in U-trench for power MOSFET's", Proceedings of the 14TH International Symposium on Power Semiconductor Devices & ICS, pp. 149-152

Gary Dolny, Samia A Suliman, N. Gollagunta, L. Trabzon, Mark W Horn, Osama O Awadelkarim, Stephen J Fonash, C. M. Knoedler, J. Hao, R. Ridley, C. Kocon, T. Grebs and J. Zeng, 2001, "Characterization of gate oxide degradation mechanisms in trench-gated power MOSFETS using the charge-pumping technique", pp. 431-434

Service to Penn State:

• Participation in Governance Bodies and Related Activities, Member, Engineering Faculty Council, July 2023 - June 2024

• Participation in Governance Bodies and Related Activities, Member, University Faculty Senate, Global Engagement Standing Committee, July 2023 - June 2024

• Committee Work, Member, Engineering Faculty Council, July 2023 - June 2024

• Academic Leadership and Support Work, Committee Member, University Facukty Senate Council, July 2023 - June 2024

• Participation in Governance Bodies and Related Activities, Committee Member, Faculty Senate, CC&R Standing Committee, July 2022 - June 2023

• Committee Work, Member, materials Qualifying Oral Exam, PSU, 2010

• Assistance to Student Organizations, Evaluator, CoE-CERS- program /Paper-Poster-Oral presentation Judge, 2015

• Contributions to Programs to Enhance Diversity, Equity, Inclusion, and Belonging, Panelist, College of Engineering Diversity Committee: International Panel, February 2016

Service to External Organizations:

• Service to Governmental Agencies, Panelist, NSF-GRFP 2023-2024., Computer and Electrical Engineering, December 2023 - January 2024

• Participation in or Service to Professional and Learned Societies, Other, Chairperson of Reliability-Testing track committee, International Reliability Physics Symposium-Reliability Test Track, IEEE, August 2022 - April 2023

• Participation in or Service to Professional and Learned Societies, Other, Vice Chair of Reliability Testing track, International Reliability Physics Symposium-Reliability Test Track, IEEE, August 2021 - April 2022

• Participation in or Service to Professional and Learned Societies, Member, International Reliability Physics Symposium-Reliability Test Track, IEEE, August 2020 - April 2021

• Participation in or Service to Professional and Learned Societies, Member, International Reliability Physics Symposium-Reliability Test Track, IEEE, 2019 - 2020

• Service to Governmental Agencies, Participant, NSF-ATE Advanced Technology Education, October 2014 - October 2014

• Service to Governmental Agencies, Participant, NSF-ATE Advanced Technology Education, October 2013 - October 2013

• Service to Governmental Agencies, Reviewer, NSF-SBIR-STTR Nanotechnology, August 2006

• Service to Governmental Agencies, Participant, NSF- Additive Manufacturing Workshop, March 2014

• Service to Governmental Agencies, Panelist, NSF-GRFP, 2006