Journal Articles

Nicholas J Harmon, James P Ashton, Patrick M Lenahan and Michael E Flatte, 2023, "Spin-dependent capture mechanism for magnetic field effects on interface recombination current in semiconductor devices", Spin-dependent capture mechanism for magnetic field effects on interface recombination current in semiconductor devices Cite as: Appl. Phys. Lett. 123, 251603 (2023); doi: 10.1063/5.0172275 Submitted: 14 August 2023 . Accepted: 30 November 2023 . Published Online: 20 December 2023 Nicholas J. Harmon,1,2,a) James P. Ashton,3,b) Patrick M. Lenahan,3 and Michael E. Flatte 4,5 AFFILIATIONS 1 Department of Physics and Engineering Science, Coastal Carolina University, Conway, South Carolina 29526, USA 2 Department of Physics, University of Evansville, Evansville, Indiana 47722, USA 3 Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802, USA 4 Department of Physics and Astronomy, University of Iowa, Iowa City, Iowa 52242, USA 5 Department of Applied Physics, Eindhoven University of Technology, Eindhoven, The Netherlands, 123,

Kenneth J M Lenahan, Patrick M Lenahan, James P Ashton and Jason T Ryan, 2022, "A New Approach to Electrically Detected Magnetic Resonance:Spin -Dependent Transient Spectroscopy", Journal of Applied Physics, 132, (11)

Kenneth J Sharov, Brian J Manning and Patrick M Lenahan, 2022, "Electrically Detected Electron Nuclear Double Resonance in Amorphous Hydrogenated Boron Thin Films", Solid State Communications, 353, (article number 114864)

Fedor V Sharov, 2022, "Probing The Atomic Scale Mechanismsof Time Dependent Dielectric Breakdownin SiSiO2MOSFETs", IEEE Transactions on Device and Materials Reliability, 22, (3), pp. 322-331

Stephen J Moxim, Fedor V Sharov, David R Hughart, Gaddi S Hasse, Colin G McKay and Patrick M Lenahan, 2022, "Atomic Scale Defects Generated in the Early/ Intermediate Stages of Dielectric Breakdown in SiSiO2 Transistors", Applied Physics Letters, 120, (6), pp. art# 063502

Brian R Manning, Patrick M Lenahan and Fedor V Sharov, 2022, "A Computationally Efficient Discrete Pseudomodulation Algorithm for Real Time Magnetic Resonance Measurements", Review of Scientific Instruments, 93, (1), pp. art.#015104

Fedor V Sharov, Stephen J Moxim, Gaddi S Hasse, David R Hughart, Patrick M Lenahan, Patrick M Lena andan, , 2022, "A comparison of Radiation -Induced and High -Field Electrically Stress-Induced Interface Defects in Si/SiO2 MOSFETs via Electrically Detected Magnetic Resonance", IEEE Transactions onnNuclear Science, 69, (3), pp. 208-215

James P Ashton, Brian R Manning, Stephen J Moxim, Fedor V Sharov, Patrick M Lenahan and Jason T Ryan, 2022, "Intermediate Spin Pair Relaxation Through Modulation of Isotropic Hyperfine Interaction in Frequency -Swept Spin Dependent Recombination in 4H-SiC", Applied Physics Letters, 120, (6), pp. art.#062403

James P Ashton, Brian R Manning and Patrick M Lenahan, 2021, "Ultra Low Field, Frequency Swept Electrically Detected Magnetic Resonance (EDITOR's PICK)", Journal of Applied Physics

Mark A Anders, Patrick M Lenahan, Nicholas J Harmon and Michael E Flatte, 2020, "A technique to measure spin-dependent trapping events at the metal–oxide–semiconductor field-effect transistor interface: Near zero field spin-dependent charge pumping", (EDITOR's PICK) Journal of Applied Physics, 128

James P Ashton, Patrick M Lena andan, , 2020, "Multiple-photon transitions in electrically detected magnetic resonance measurements of transistors JP Ashton, PM Lenahan", Physical Review B, Rapid Communications, 102, (2)

Elias B Frantz, Nicholas J Harmon, Stephen R McMillan, Stephen J Moxim, Michael E Flatte and Patrick M Lenahan, 2020, "Extraction of Isotropic Electron-Nuclear Hyperfine Coupling Constants of Paramagnetic Point Defects from Near Zerp Field Magnetyoresistance Spectra via Least-Squares Fitting to Models Developed from the Stochastic Quantum Liouville Equation", Journal of Applied Physics, 128(10) 124504, (10)

Nicholas J Harmon, Stephen R McMillan, James P Ashton, Patrick M Lenahan and Michael E Flatte, 2020, "Modeling of Near Zero-Field Magnetoresistance and Electrically Detected Magnetic Resonance in Irradiated Si/SiO2 MOSFETs", IEEE Transactions on Nuclear Science, 2, (67), pp. 4

Nicholas Harmon, Michael E Flatte, James J Ashton and Patrick M Lenahan, 2020, "Observation of Radiation-Induced Leakage Current Defects in MOS Oxides With Multifrequency Electrically Detected Magnetic Resonance and Near-Zero-Field Magnetoresistance", IEEE Tranactions on Nuclear Science, 67, (1), pp. 6

Ryan J Waskiewicz, Brian R Manning, Duane J McCrory and Patrick M Lenahan, 2020, "ANew Technique for Analyzing Defectsin Silicon Carbide Devices: Electrically Detected Electron Nuclear Double Resonance", Materials Science Forum, (1004), pp. 8

Brian R Manning, Patrick M Lenahan and Corey J Cochrane, 2020, "An Improved Adaptive Signal Averaging Technique for Noise Reduction and Tracking Enhancements in Continuous Wave Magnetic Resonance", Review of Scientific Instruments

Stephen J. Moxim, James P. Ashton, Patrick M Lenahan, Michael E. Flatte, Nicholas J. Harmon and Sean W. King, 2020, "Observation of Radiation-Induced Leakage Current Defects in MOS Oxides With Multifrequency Electrically Detected Magnetic Resonance and Near-Zero-Field Magnetoresistance", IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 67, (1), pp. 228-233

Mark A Anders, Patrick M Lenahan and Jason T Ryan, 2020, "Wafer level near zero field spin dependent charge pumping : effects of nitrogen on 4-H SiCMOSFETs", Materials Science Forum, 1004, pp. 8

Duane J McCrory, Mark A Anders, Jason T Ryan, Pragya R Shrestha, Kin P Cheung and Patrick M Lenahan, 2019, "Slow and rapid-scan frequency -swept electrically detected magnetic resonance of MOSFETs with a non-resonant microwave probe within a semiconductor wafer-probing station", Review of Scientific Instruments, 90, pp. 10

Kenneth J Myers, Ryan J Waskiewicz, Patrick M Lenahan and Chadwin D Young, 2019, "A Multifield and Frequency Electrically Detected Magnetic Resonance Study of Atomic -Scale Defects in Gamma Irradiated modern MOS Integrated Circuitry", IEEE TRansactions on Nuclear Science, 60, (1)

James P. Ashton, Stephen J. Moxim, Patrick M Lenahan, Colin G. McKay, Ryan J. Waskiewicz, Kenneth J. Myers, Michael E. Flatte, Nicholas J. Harmon and Chadwin D. Young, 2019, "A New Analytical Tool for the Study of Radiation Effects in 3-D Integrated Circuits: Near-Zero Field Magnetoresistance Spectroscopy", IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 66, (1), pp. 428-436

Brian R. Manning, Ryan J. Waskiewicz, Duane J. McCrory and Patrick M Lenahan, 2019, "Apparatus for electrically detected electron nuclear double resonance in solid state electronic devices", REVIEW OF SCIENTIFIC INSTRUMENTS, 90, (12)

Ryan J. Waskiewicz, Brian R. Manning, Duane J. McCrory and Patrick M Lenahan, 2019, "Electrically detected electron nuclear double resonance in 4H-SiC bipolar junction transistors", JOURNAL OF APPLIED PHYSICS, 126, (12)

Duane J. McCrory, Mark A. Anders, Jason T. Ryan, Pragya R. Shrestha, Kin P. Cheung, Patrick M Lenahan and Jason P. Campbell, 2019, "Slow- and rapid-scan frequency-swept electrically detected magnetic resonance of MOSFETs with a non-resonant microwave probe within a semiconductor wafer-probing station", REVIEW OF SCIENTIFIC INSTRUMENTS, 90, (1)

Mark A Anders, Corey J Cochrane, Patrick M Lenahan and Johan van Tol, 2018, "Physical nature of electrically detected magnetic resonance through spin dependent trap assisted tunneling in insulators", Journal of Applied Physics, 124

James P Ashton, Stephen J Moxim, Patrick M Lenahan, Ryan J Waskiewicz, Kenneth J Myers, Michael E Flatte, Nicholas J Harmon, Chadwin D Young and Colin G McKay, 2018, "A New Analytical Tool for the Study of Radiation Effects in 3-D Integrated Circuits: Near Zero Field Magnetoresistance Spectroscopy", IEEE Transactions on Nuclear Science, 66, (1), pp. 428-436

Mark A Anders, Patrick M Lenahan, Arthur H Edwards, Peter A Schultz and Renee M Van Ginhoven, 2018, "Efects of nitrogen on the interface density of states distribution in 4H-SiC metal oxode semiconductor field effect transistors: Super-hyperfine interactions and near interface silicon vacancy energy levels", Journal of Applied Physics, 124, pp. article number184501

Corey J Cochrane, Hannes Kraus, Philip G Neudeck, David Spry, James Ashton, Ryan J Waskiewicz and Patrick M Lenahan, 2018, "Magnetic Field Sensing with 4H SiC Diodes:N versus P Implantation", Materials Science Forum, 924, pp. 988-992

Mark A Anders, Patrick M Lenahan and Aivars J Lelis, 2018, "The Effects opf Nitrogen on the 4H SiC/SiO2 Interface Studied With Variable Resonance Frequency Spin Dependent Charge Pumping", Materials Science Forum, 924, pp. 469-472

Duane J McCrory, Mark A Anders, Jason T Ryan, Pragia R Sheresha, Kin P Cheung, Jason P Camobell and Patrick M Lenahan, 2018, "Wafer-Level Electrically Detected Mgnetic Resonance: Magnetic Resonance in a Probing Station", IEEE Transactions in Device and Materials Reliability, 18, (2), pp. 139-143

Duane J McCrory, Patrick M Lenahan, D M Nmimbapel, Dimitri Veksler, Jason T Ryan and Jason P Campbell, 2018, "Total Ionizing Dose Effectson TiN/Ti/Hfo2?TiN Resistive Random Access Memory Studied via Electrically Detectec Magnetic Resonances", IEEE Transactions on Nuclear Science, 65, (5), pp. 1101-1107

Patrick M Lenahan, Mark A Anders, Ryan J Waskiewicz and Aivars J Lelis, 2018, "(INVITED PAPER) Bias temperature instabilities in 4H SiC metal oxide semiconductor field effect transistors:Insight provided by electrically detected magnetic resonance", Microelectronics Reliability, 81, pp. 1-6

Patrick M Lenahan, Mark A Anders, Ryan J Waskiewicz and Aivars J Lelis, 2017, "Bias temperature instabilities in 4H SiC metal oxide semiconductor field effect transistors: Insight provided by electrically detected magnetic resonance", Microelectronics Engineering, 81, pp. 6

Mark A Anders, Patrick M Lenahan and Aivars J Lelis, 2017, "Multi-resonance frequency spin dependent charge pumping and spin dependent recombination applied to the 4H SiC SiO2 interface", Journal of Applied Physics, 122, (23), pp. art # 234503

T Tsuchiya and Patrick M Lenahan, 2017, "Distribution of Energy Levelsof Individual Interface Traps and a Fundamental Refinement of Charge Pumping Theory", Japanese Journal of Applied Physics, 56, pp. article number:031301

Ryan J. Waskiewicz, Mark A. Anders, Patrick M Lenahan and Aivars J. Lelis, 2017, "Ionizing Radiation Effects in 4H-SiC nMOSFETs Studied With Electrically Detected Magnetic Resonance", IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 64, (1), pp. 197-203

Corey J Cochrane, Jordana Blacksburg, Mark A Anders and Patrick M Lenahan, 2016, "Vectorized Magnetometer for Space Applications Using Electrical Readout of Atomic Scale Defects in Silicon Carbide", Nature: Science Reports, 6, pp. #37077

Mark A Anders, Patrick M Lenahan, Aivars J Le andis, , 2016, "Are Dangling Bond Centers Important Interface Traps in 4H SiC Metal Oxide Semiconductor Field Effect Transistors?", Applied Physics Letters, 109, pp. art # :142106

Michael J Mutch, Patrick M Lenahan, Sean W K andng, , 2016, "Spin Transport, magnetoresistance, and electrically detected magnetic resonance in amorphous hydrogenated silicon nitride", Applied Physics Letters, 109, pp. art#:062403

Michael J Mutch, Patrick M Lenahan, Thomas Pomarski, Brad C Bittel and Sean W King, 2016, "Band Diagrams for Low -k / Cu Interconnects : the starting point for u8nderstanding back end of the line (BEOL) electrical reliability", Microelectronics Engineering, 63, pp. p.201...

Michael J Mutch, Patrick M Lenahan and Sean W King, 2016, "Defect Chemistry and Electronic Transport in Low-K Dielectrics Studied with Electrically Detected Magnetic Resonance", Journal of Appliued Physics, 119, pp. art#;094102

Ryan J Waskiewicz, J , Mark A Anders and Aivars J Lelis, 2016, "Ionizing Radiation Effects in 4H SiC MOSFETs Studied With Electrically Detected Magnetic Resonance", IEEE Transactions on Nuclear Science, 64, (1)

Mark A Anders, Patrick M Lenahan, Aivars j Le andis, , 2016, "A Surprising Result: Bulk SiC Defects in The Negative Bias Temperature Instability in 4H SiC MOSFETs", Materials Science Forum, 858, pp. 513

Corey J Cochrane, Jordana Blacksburg, Patrick M Lenahan and Mark A Anders, 2016, "Magnetic Field Sensing With Atomic Scale Defects in SiC Devices", Materials Science Forum, 858, pp. 265-268

Russell A Meier, Thomas A Pomorski, Patrick M Lenahan and Clive A Randall, 2015, "Acceptor-oxygen vacancy defect dipoles and fully coordinated defect centers in a ferroelectric perovskite lattice: Electron paramagnetic resonance analysis of Mn2+ in single crystal BaTiO3", Journal of Applied Physics, 118, (16)

M A Anders, Patrick M Lenahan, C J Cochrane and A J Lelis, 2015, "Relationship Between the 4H SiC/SiO2 Interface Structure and Electronic Properties Explored by Electrically Detected Magnetic Resonance", IEEE Transactions on Electron Devices, 62, (2), pp. 301-308

, T A Pomor andki, , 2014, "Defect Structure and Electronic Propertiers of SiOCHFilms Used for Back End of the line dielectrics", Journal of Applied Physics

T A Pomorski, B A Bittel, Patrick M Lenahan, E Mays, C Edge, J Bielefield, D Michalek and S W King, 2014, "Defect Structure and Electronic Properties of SiOC:H Films Used for Back End of the Line", Journal of Applied Physics, 115, (234508)

C J Cochrane and Patrick M Lenahan, 2014, "Spin Counting in Electrically Detected Magnetic Resonance Via Low Field Defect State Mixing", Applied Physics Letters, 104, pp. 093503

C. J. Cochrane and Patrick M Lenahan, 2013, "Detection of Interfacial Pb Centers in Si/SiO2 Metal-Oxide -Semiconducting Field Effect Transistors Via Zero-Field Spin Dependent Recombination With Observation of Precursor Pair Spin-Spin Interactions", Applied Physics Letters, 103, (053506)

C. J. Cochrane and Patrick M Lenahan, 2013, "The effect of nitric oxide anneals on silicon vacancies at and very near the interface of 4H SiC metal oxide semiconductor field effect transistors using electrically detected magnetic resonance", Applied Physics Letters, 102, (193507)

T. A. Pomorski, B. C. Bittel, C. J. Cochrane, Patrick M Lenahan, J. Bielenield and S. W. King, 2013, "Defects and electronic transport in hydrogenated amorphous SiC films of interest for low dielectric constant back end of the line dielectric systems", Journal of Applied Physics, 114, (074501)

B. R. Tuttle, T. Aichinger, Patrick M Lenahan and S. T. Panteleides, 2013, "Theory of hyperfine active nitrogen complexes observed in 4H-SiC diodes", Journal of Applied Physics, 114, (113712)

T. Aichinger, Patrick M Lenahan and P. Dethard, 2013, "Interface defects and negative bias temperature instabilities in 4H SiC pMOSFETs: a combined DCIV and SDR study", Materials Sciuence Forum, 740-742, pp. p. 529

C. J. Cochrane and Patrick M Lenahan, 2012, "Zero-field detection of spin dependent recombination with direct observation of electron nuclear hyperfine interactions in the absence of an oscillating electromagnetic field", JOURNAL OF APPLIED PHYSICS, 112, (12)

Thomas Aichinger and Patrick M Lenahan, 2012, "Giant amplification of spin dependent recombination at heterojunctions through a gate controlled bipolar effect", APPLIED PHYSICS LETTERS, 101

Thomas Aichinger, Patrick M Lenahan and Blair R. Tuttle, 2012, "A nitrogen-related deep level defect in ion implanted 4H-SiC pn junctions-A spin dependent recombination study", APPLIED PHYSICS LETTERS, 100

C. J. Cochrane, Patrick M Lenahan and A. J. Lelis, 2012, "Identification of a silicon vacancy as an important defect in 4H SiC metal oxide semiconducting field effect transistor using spin dependent recombination", APPLIED PHYSICS LETTERS, 100

C. J. Cochrane, Patrick M Lenahan and A. J. Lelis, 2012, "Definitive Identification of an Important 4H SiC MOSFET Interface/Near Interface Trap", Materials Science Forum, 717-720, pp. 433-436

B. C. Bittel, Patrick M Lenahan and J. T. Ryan, 2011, "Spin dependent charge pumping in SiC metal-oxide-semiconductor field-effect-transistors", Applied Physics Letters, 99

Patrick M Lenahan, J. Campbell and A. Krishnan, 2011, "A Model for NBTI in Nitrided Oxide MOSFETs which does not involve hydrogen or diffusion", IEEE Transactions on Device and Material Reliability, 11, pp. 219-226

E. Lipp, Z. Shahar, B. C. Bittel, Patrick M Lenahan, D. Schwendt, H. J. Osten and M. Eizenberg, 2011, "Trap-assisted conduction in Pt-gated Gd203/Si capacitors", Journal of Applied Physics, 109, pp. 073724

A. J. Stevenson, B. C. Bittel, C. G. Leh and Patrick M Lenahan, 2011, "Color center formation in vacuum sintered Nd3xY3-3xAl5O12transparent ceramics", Applied Physics Letters, 98, pp. 051906

C. J. Cochrane, Patrick M Lenahan and A. J. Lelis, 2011, "An electrically detected magnetic resonance study of performance limiting defects in SiC metal oxide semiconductor field effect transistors", Journal of Applied Physics, 109, pp. 014506

J. T. Ryan, Patrick M Lenahan, A. T. Krishnan and S. Krishnan, 2010, "Energy resolved spin dependent tunneling in nanometer scale dielectrics", Journal of Applied Physics, 108, pp. 064511

B. C. Bittel, Patrick M Lenahan and S. W. King, 2010, "Ultraviolet radiation effects on paramagnetic defects in low kappa dielectrics for ultra large scale integrated circuit interconnects", Applied Physics Letters, 97, pp. 063506

J. T. Ryan, Patrick M Lenahan and T. Grasser, 2010, "Observations of negative bias instability defect generation via on the fly electron spin resonance", Applied Physics Letters, 96, pp. 223509

C. J. Cochrane and Patrick M Lenahan, 2010, "Adaptive Signal Averaging Technique That Reduces the Acquisition Time of Continuous Wave Magnetic Resonance Experiments", EPR Newsletter, 19, (4), pp. 10-11

Patrick M Lenahan, 2010, "Origin of the flatband rolloff phenomenon in metal/high -k gate stacks", IEEE Transactions on Electron Devices, 57, pp. 2047-2056

J. T. Ryan, Patrick M Lenahan and A. T. Krishnan, 2009, "Energy resolved spin dependent tunneling in 1.2 nm dielectrics", APPLIED PHYSICS LETTERS, 95, (10)

C. J. Cochrane, Patrick M Lenahan and A. J. Lelis, 2009, "Direct observation of lifetime killing defects in 4H SiC epitaxial layers through spin dependent recombination in bipolar junction transistors", Journal of Applied Physics, 105, (6)

C. J. Cochrane, Patrick M Lenahan and A. J. Lelis, 2009, "Direct Observation of Lifetime Killing Defects in 4H SiC Epitaxial Layers via Spin Dependent Recombination in Transistors", Materials Science Forum, 615-617, pp. 299-302

C. J. Cochrane, Patrick M Lenahan and A. J. Lelis, 2009, "Electrically Detected Magnetic Resonance Studies of Processing Variations in 4H SiC Based MOSFETs", Materials Science Forum, 600-603, pp. 719-722

C. J. Cochrane, B. C. Bittel, Patrick M Lenahan, J. Fronheiser, K. Matocha and A. Lelis, 2009, "EDMR and EPR Studies of 4H SiC MOSFETs and Capacitors", Materials Science Forum, 645-648, pp. 527-530

J. P. Campbell, Patrick M Lenahan, A. T. Krishnan and S. Krishnan, 2008, "Identification of Atomic Scale Defects Involved in the Negative Bias Instability in Plasma Nitrided pMOSFETs", Journal of Applied Physics, 103, pp. 044505

C. J. Cochrane and Patrick M Lenahan, 2008, "Real Time Exponentially Weighted Recursive Least Squares Adaptive Signal Averaging For Enhancing the Sensitivity of Continuous Wave Magnetic Resonance", Journal of Magnetic Resonance, 195, (1), pp. 17-22

J. T. Ryan, Patrick M Lenahan, J. Robertson and G. Bersuker, 2008, "Direct observation of electrically active interfacial layer defects which may cause threshold voltage instabilities in HfO2 based metal-oxide-silicon field effect transistors", Applied Physics Letters, 92, (12)

J. P. Campbell, Patrick M Lenahan, A. T. Krishnan and S. Krishnan, 2008, "Identification of the atomic scale defects involved in the negative bias temperature instability in plasma nitrided p-channel metal-oxide -silicon field effect transistors", Journal of Applied Physics, 103, (4)

Patrick M Lenahan, B. Knowlton and J. F. Conley, 2008, "Introduction to the Special Issue on the 2007 International Integrated Reliability Workshop", IEEE Transactions on Device and Materials Reliability, 8, (3), pp. p. 490

J. P. Campbell, Patrick M Lenahan, C. J. Cochrane, A. T. Krishnan and S. Krishnan, 2007, "Atomic-scale defects involved in the negative-bias temperature instability", IEEE Trans. Device and Materials Reliability, 7, pp. 540-557

J. P. Campbell, Patrick M Lenahan, A. T. Krishnan and S. Krishnan, 2007, "Identification of atomic-scale defect structure involved in the negative bias temperature instability in plasma-nitrided devices", Applied Physics Letters, 91

Patrick M Lenahan, 2007, "Deep level defects involved in MOS device instabilities", Microelectronics Reliability, 47, (6), pp. 890-898

J. T. Ryan, Patrick M Lenahan, G. Bersuker and P. Lysaght, 2007, "Electron spin resonance observations of oxygen deficient silicon atoms in the interfacial layer of hafnium oxide based metal-oxide-silicon structures", Applied Physics Letters, 90, pp. 173513

C. J. Cochrane, Patrick M Lenahan and A. J. Lelis, 2007, "Deep level defects which limit current gain in 4H SiC bipolar junction transistors", Applied Physics Letters, 90, pp. 123501

C. J. Cochrane, Patrick M Lenahan, J. P. Campbell, G. Bersuker and A. Neugroschel, 2007, "Observation of negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination", Applied Physics Letters, 90, pp. 123502

M. S. Dautrich, Patrick M Lenahan and A. J. Lelis, 2006, "Identification of Trapping Defects in 4H-Silicon Carbide Metal-Insulator-Semiconductor Field Effect Transistors by Electrically Detected Magnetic Resonance", Applied Physics Letters, 89, (22), pp. 223502

Patrick M Lenahan, N. T. Pfeffenberger, T. G. Pribicko and A. J. Lelis, 2006, "Identification of Deep Level Defects in SiC Bipolar Junction Transistors", Materials Science Forum, 527-529, pp. 567-570

M. S. Dautrich, Patrick M Lenahan and A. J. Lelis, 2006, "Observation of Deep Level Centers in 4H - Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors by Spin Dependent Recombination", Materials Science Forum, 527-529, pp. 1011-1014

G. Bersuker, C. S. Park, J. Barnett, P. S. Lysaght, P. D. Kirsch, C. D. Young, R. Choi, B. H. Lee, B. Foran, K. van Benthem, S. J. Penneycock, Patrick M Lenahan and J. T. Ryan, 2006, "The effect of interfacial layer properties on the performance of Hf based gate stack devices", Journal of Applied Physics, 100, (9), pp. 094108

J. P. Campbell, Patrick M Lenahan, A. T. Krishnan and S. Krishnan, 2006, "Observation of NBTI-Induced Atomic Scale Defects", IEEE Trans. on Device and Materials Reliability, 6, (117)

J. T. Ryan, Patrick M Lenahan, A. Y. Kang, J. F. Conley, G. Bersuker and P. Lysaght, 2005, "Identification of the atomic scale defects involved in radiation damage in HfO2 based MOS devices", IEEE Transactions on Nuclear Science, 52, (6), pp. 2272-2275

P. J. Campbell, Patrick M Lenahan, A. T. Krishnan and S. K. Krishnan, 2005, "Direct observation of the structure of defect centers involved in the negative bias temperature instability", Applied Physics Letters, 87, (20)

T. G. Pribicko, J. P. Campbell, Patrick M Lenahan and W. Tsai, 2005, "Interface defects in Si/HfO2 based metal-oxide-semiconductor field effect transistors", Applied Physics Letters, 86, (17)

J. F. Conley, G. Bersuker and Patrick M Lenahan, 2005, "Introduction to the special issue on high -k dielectric reliability", IEEE Transactions on Device and Materials Reliability, 5, (1), pp. 3

Patrick M Lenahan and J. F. Conley, 2005, "Magnetic resonance studies of trapping centers in high-k dielectric films on silicon", IEEE Transactions on Device and Materials Reliability, 5, (1), pp. p. 90

D. J. Meyer, Patrick M Lenahan and A. J. Lelis, 2005, "Observation of trapping defects in 4H - silicon carbide metal - oxide - semiconductor field effect transistors by spin dependent recombination", Applied Physics Letters, 86, (2)

D. J. Meyer, M. S. Dautrich, Patrick M Lenahan and A. J. Lelis, 2005, "Observation of deep level centers in 4H and 6H silicon carbide metal oxide semiconductor field effect transistors", Materials Science Forum, 483, pp. p. 593

Mark A Anders, Patrick M Lenahan and Aivars J Lelis, , "A Surprising Result: ‘Bulk’ SiC Defects in the Negative Bias Instability in 4H-SiC MOSFETs", Materials Science Forum

Michael Mutch, Patrick M Lenahan and Sean King, , ""Defect Chemistry and Electronic Transport in Low-? Dielectrics Studied with Electrically Detected Magnetic Resonance"", Journal of Applied Physics

Corey J Cochrane, Jordana Blacksburg and Patrick M Lenahan, , "Magnetic Field Sensing with Atomic Scale Defects in SiC Devices", Materials Science Forum

Corey J Cochrane, Patrick M Lenahan, Ryan J Waskiewicz and James Ashton, , "Magnetic Field Sensing with 4-H SiC Diodes:: N versus P Implantation", Materials Science Forum

Mark A Anders, Patrick M Lenahan and Aivars J Lelis, , "The Effect of Nitrogen on the 4-H SiC/SiO2 Interface Studied with Variable Resonance Frequency Spin Dependent Charge Pumping", Materials Science Forum

Patrick M Lenahan, Ryan J Waskiewicz and Brian Manning, , "A New Technique for Analyzing Defects in Silicon Carbide Devices:Electrically Detected Electron Nuclear Double Resonance", Materials Science Forum

Brian R Manning, James R Ashton and Patrick M Lenahan, , "Observation of Electrically Detected Electron Nuclear Double Resonance in Amorphous Hydrogenated Silicon Films", Journal of Applied Physics

Conference Proceedings

Patrick M Lenahan, Elias B Frantz, Sean W King, Mark A Anders, Stephen J . Moxim, James P J. P. Ashton, Kenneth J . Myers, Michael E Flatte and Nicholas J Harmon, 2023, "Near Zero Field Magnetoresistance Spectroscopy: A New Tool in Semiconductor Reliability Physics", Proceedings of the 2023International Reliability Physics Symposium, pp. 7

FEDOR V Sharov, Stephen J Moxim, Michael J Elko, Sean W King and Patrick M Lenahan, 2022, "Electrically Detected Magnetic Resonance Study ofHigh Field Stressing in SiOCH Films", 2022 IEEE International Integrated Reliability Workshop (IIRW) Final Report (Proceedings), Boalsburg, United States, pp. 4

Stephen J Moxim, Patrick M Lenahan, Fedor V Sharov, Gadde S Hasse and David R Hughart, 2020, "Electrically Detected Magnetic Resonance Studyof High -Field Stress Induced Si/SiO2 Interface Defects", IEEE International Integrated Reliability Workshop, IEEE, pp. 4

James P Ashton, Patrick M Lenahan, Daniel J Lichtenwalner and Aivars J Lelis, 2020, "Leakage Currents and E' Centers in 4H-SiC MOSFETs with Barium Passivation", 2020 IEEE International Reliability Physics Symposium Proceedings, IEEE, USA, pp. 4

Kenneth J Myers, Patrick M Lenahan, Brad Bittel and Inac Meric, 2019, "Exploring Negative Bias Temperature Intstability in Tri-GateMOSFETs Through Electrically Detected Magnetic Resonance", IEEE, US

Ryan J Waskiewicz, Patrick M Lenahan, Duane J McCrory and Sean W King, 2019, "Electrically Detected Electron Nuclear Double Resonance :A New Technique for Identifying Detailed Structural Information About Defectsin Semiconductor Devices", GOMAC Conference Proceedings, US

James P. Ashton, Patrick M Lenahan, Daniel J. Lichtenwalner, Aivars J. Lelis and Mark. A. Anders, 2019, "Reliability and Performance Issues in SiC MOSFETs: Insight Provided by Spin Dependent Recombination", 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)

Ryan J Waskiewicz, Patrick M Lenahan and Sean W King, 2018, "Identifying Defecrts Responsible for Leakage Currents in Thin Dielectric Fillms", (Poroceedings of) IEEE International Integrated Reliability Workshop-Final Report, IEEE, pp. 5

Sebastian I Goodridge, Patrick M Lenahan, Chadwin D Young, M Quavido-Lo andez, , 2016, "Spin Dependent Recombination in CdTe Solar Cells", IEEE Photovoltaics Specialists Conference Proceedings, pp. 1553-1556

Ryan J Waskiewicz, Patrick M Lenahan and Mark A Anders, 2016, "Radiation Induced Leakage Currents in Dense and Porous Low-K Dielectrics", IEEE

Mark A Anders, Patrick M Lenahan and Aivars J Lelis, 2015, "Negative Bias Instability in 4H-SiC MOSFETS:", pp. 3E.4.1

C J Cochrane, M A Anders, M Mutch and Patrick M Lenahan, 2014, "Quantitative Electrically Detected Magnetic Resonance for Device Reliability Studies", pp. 6-9

M A Anders, Patrick M Lenahan, J Follman, S D Arthur, J McMahon, L Liu, X Zhu and A J Lelis, 2014, "Electrically Detected Magnetic Resonance Study of NBTI in 4-H SiC MOSFETs", pp. 16-19

M. Pigott, L. Young, Patrick M Lenahan, A. Halverson, K. W. Andreani and B. A. Korevar, 2013, "Electron Paramagnetic Resonance as aProbe of Technologivcally Relevant Processing Effects on CdTe Solar Cell materials", Proceedings of the 39th IEEE Photovoltaics Conference, 0635

C. J. Cochrane and Patrick M Lenahan, 2012, "Zero Field Spin Dependent Transport in the Absence of an Oscillation Magnetic Field: A Means to Study Reliability Based Defects in Fully Processed Devices", Proceedings of the 2012 IEEE International Integrated Reliability Workshop, pp. 45-47

Thomas Aichinger, Patrick M Lenahan and Tibor Grasser, 2012, "Evidence for P-b center-hydrogen complexes after subjecting PMOS devices to NBTI stress - a combined DCIV/SDR study", IEEE International Reliability Physics Symposium (IRPS)

Patrick M Lenahan, C. J. Cochrane, J. P. Campbell and J. Y. Ryan, 2011, "Electrically Detected Magnetic Resonance in Dielectric Semiconductor Systems of Current Interest", Electrochemical Society Transactions, 35, (4), pp. 605-627

B. C. Bittel, Patrick M Lenahan, T. A. Pomorski and S. W. King, 2011, "Electron Spin Resonance Studies of Interlayer Dielectrics", IEEE International Integrated Reliability Workshop Final Report (This is the conference proceedings)

B. C. Bittel, Patrick M Lenahan, J. T. Ryan, J. Fronheiser and A. J. Lelis, 2011, "Spin Dependent Charge Pumping:A New Tool for Reliability Studies", IEEE International Integrated Reliability Workshop Final Report (This is the conference proceedings)

J. T. Ryan, Patrick M Lenahan, T. Grasser and H. Enichlmar, 2010, "Recovery free electron spin resonance observation of NBTI degradation", Proceedings of the IEEE International Reliability Physics Symposium

B. C. Bittel, T. A. Pomarski, Patrick M Lenahan and S. King, 2010, "Defects in low -k dielectrics and etch stop layers for use as interlayer dielectrics in ULSI", Proceedings of the 2011 IEEE International Integrated Reliability Workshop ( The Final Report) IEEE catalog number CFP10 IRW -PRT, pp. 42-45

B. C. Bittel, Patrick M Lenahan and S. King, 2010, "Reliability and performance limiting defects in low-k dielectrics for use as interlayer dielectrics", Proceedings of the IEEE International Reliability Physics Symposium, pp. IC13.1-IC13.4

J. T. Ryan, Patrick M Lenahan, A. T. Krishnan and S. Krishnan, 2009, "Investigation of SILC via Energy Resolved Spin Dependent Tunneling Spectroscopy", IEEE International Integrated Reliability Workshop Proceedings ( The Final Report) IEEE Catalog number: CFP09 IRW-PRT, pp. 1-4

J. T. Ryan, Patrick M Lenahan, T. Grasser and H. Enichlmair, 2009, "What Triggers NBTI? An "On The Fly" Electron Spin Resonance Approach", IEEE International Integrated Reliability Workshop Proceedings (The Final Report) IEEE Catalog number: CFP09 IRW-PRT, pp. 42-45

J. T. Ryan, Patrick M Lenahan, A. T. Krishnan and S. Krishnan, 2009, "Spin Dependent Recombination Study of the Atomic -Scale Effects of Flourine on the Negative Bias Temperature Instability", Proceedings of the 2009 IEEE International Reliability Physics Symposium, IEEE CFP09RPS-CDR, pp. 988-991

Patrick M Lenahan, 2009, "A Radically Different Model for NBTI in nitridedoxide MOSFETs", IEEE International Integrated Reliability Workshop Proceedings ( The Final Report) IEEE Catalog number: CFP09 IRW-PRT, pp. 90-92

J. T. Ryan, Patrick M Lenahan, A. T. Krishnan and S. Krishnan, 2008, "An Electrically Detected Magnetic Resonance Study of the Atomic Scale Effects of Flourine on the Negative Bias Temperature Instability", IEEE International Integrated Reliability Workshop Final Report, pp. 137-140

J. T. Ryan and Patrick M Lenahan, 2008, "Interfacial Layer Defects and Instabilities in HfO2 MOS Structures", Proceedings of the IEEE International Reliability Physics Symposium, pp. 665-666

G. Bersuker, D. Heh, C. D. Young, H. Park, P. Khanal, L. Larcher, A. Padovani, Patrick M Lenahan, J. T. Ryan, B. H. Lee, H. Tseng and R. Jammy, 2008, "Breakdown in the Metal/High -k Gate Stack: Identifying the Weak Link in the Multilayer Dielectric", IEEE International Electron Devices Meeting Technical Digest, pp. 791-794

C. J. Cochrane, Patrick M Lenahan and A. J. Lelis, 2008, "Interface traps in SiC MOSFETs", IEEE International Integrated Reliability Workshop, pp. 68-71

J. P. Campbell, Patrick M Lenahan, A. T. Krishnan and S. Krishnan, 2007, "Location Structure and Density of States of NBTI- InducedDefects in Plasma -Nitrided pMOSFETs", Proceedeings of the 2007 IEEE International Reliability Physics Symposium, pp. 503-510

J. P. Campbell, Patrick M Lenahan, A. T. Krishnan and S. Krishnan, 2007, "Atomic Scale Defects Involved in NBTI in Plasma Nitrided pMOSFETs", Proceedings of the 2007 IEEE International Integrated Reliability Workshop ( Final Report), pp. 12-17

J. T. Ryan and Patrick M Lenahan, 2007, "Direct Observation of Electrically Active Interfacial Layer Defects Which May Cause Threshold Voltage Instabilities in HfO2 Based MOSFETs", Proceedings of the 2007 IEEE International Integrated Reliability Workshop ( Final Report), pp. 107-110

J. P. Campbell, Patrick M Lenahan, A. T. Krishnan and S. Krishnan, 2006, "Negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination", Proceedings IEEE International Reliability Physics Symposium

C. J. Cochrane, Patrick M Lenahan, J. P. Campbell, G. Bersuker, P. Lysaght and A. Neugroschel, 2006, "Negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination", Proceedings IEEE International Integrated Reliability Workshop

J. P. Campbell, Patrick M Lenahan, A. T. Krishnan and S. Krishnan, 2005, "Observations of NBTI-Induced Atomic Scale Defects", IEEE International Integrated Reliability Workshop, pp. 1-4

Mark A Anders and Patrick M Lenahan, , ""A New Approach for MOSFET Interface Defect Characterization: High, Ultra-low, and Zero Magnetic Field Spin Dependent Charge Pumping"…", Proceedings of the IEEE International Integrated Reliability Workshop (Final Reprt)

James R Lloyd, Patrick M Lenahan, N Mahmud and Ryan J Waskiewicz, , "TDDB in a Deuterated Low-K Interlayer Dielectric", 2019 IEEE International Integrated Reliability Workshop Final Report for 2019 ( Conference Proceedings Volume), Boalsburg, US

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