Directory

 

 
 
General InformationPublicationsResearch Projects

  • Samia A Suliman, 2014, "High-Temperature Reverse- Bias stressing of thin Oxide in Power Transistors", Conference: 12th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics held during the 226th Meeting of The Electrochemical-Society Location: Cancun, MEXICO Date: OCT 05-10, 2014
  • J. Hao, M Rioux, Samia A Suliman and Osama O Awadelkarim, 2014, "High temperature bias-stress-induced instability in power trench-gated MOSFETs", MICROELECTRONICS RELIABILITY
  • Clifford Lissenden, Christine Masters and Samia A Suliman, 2011, "Supplemental learning tools for Statics and Strength of Materials"
  • K. Sarpatwar, L. J. Passmore, Samia A Suliman and O. O. Awadelkarim, 2007, "The analysis of current-voltage-temperature characterization in SiC Schottky diodes using threshold-accepting simulated-annealing technique", Solid State Electronics, 51, (5), pp. 644-649
  • Karthik Sarpatwar, Lucas Passmore, Samia A Suliman and Osama Awadelkarim, 2007, "Analysis of Current-Voltage-Temperature Characteristics in SiC Schottky Diodes Using Threshold- Accepting Simulated-Annealing Techniques,", SOLID-STATE ELECTRONICS
  • Lucas Passmore, Karthik Sarpatwar, Samia A Suliman and Osama Awadelakrim, 2006, "Fowler-Nordheim and Hot Carrier Reliabilities of U-Shaped Trench-Gated Transistors Studied by Three Terminal Charge Pumping"
  • Samia A Suliman, 2006, "Properties of Si/SiO2Interfaces in Vertical Trench MOSFETs", IEEE, International Workshop on Junction Technology, 2006, IWJT '06, pp. 225-228
  • Osama Awadelkarim and Samia A Suliman, 2006, "Current- voltage characteristics and charge-carrier traps in n-type 4H-SiC Schottky structures - (invited", The 6th International Workshop on Junction Technology, Shanghai-China Session: Heterojunction Device and Contact
  • Samia A Suliman, 2006, "The properties of Si/SiO2 interfaces in Vertical trench UMOSFETS;Silicon-Based Novel Structures and Devices"
  • Samia A Suliman, 2005, "Fowler-Nordheim and Hot Carrier Reliabilities of U-Shaped Trench-Gated Transistors Studied by Three Terminal Charge Pumping"
  • Lucas Passmore, Karthik Sarpatwar, Samia A Suliman and Osama Awadelakrim, 2005, "Modified three terminal charge pumping technique applied to vertical transistor structures"
  • Samia A Suliman, 2005, "On the Reliability of U-Shaped Trench-Gated Metal- Oxide Silicon Field-Effect Transisto", On the Reliability of U-Shaped Trench-Gated Metal- Oxide Silicon Field-Effect Transistor
  • Samia A Suliman, Osama O Awadelkarim, R Ridley and G Donley, 2004, "Gate-oxide grown on the sidewalls and base of U-shaped Si trench: Effects of the oxide and oxide /Si interface condition on the properties of vertical MOS devices"
  • Samia A Suliman, Osama Awadelakarim and Stephen Fonash, 2003, "Electrical properties of the gate oxide and its interface with Si in U-shaped trench MOS capacitors: The impact of polycrystalline Si doping and oxide composition"
  • Samia A Suliman, Osama Awadelkarim and Stephen Fonash, 2002, "Electron and hole trapping in the bulk and interface with Si of a thermal oxide grown on the sidewalls and base of a U-shaped silicon trench"
  • C Wu, Samia A Suliman, Osama Awadelakrim and Jerzy Ryzyllo, 2002, "Growth and reliability of thick gate oxide in U-trench for power MOSFET's"
  • Samia A Suliman, Osama Awadelakarim and Stephen Fonash, 2001, "The dependence of UMOSFETs characteristics and reliability on geometry and processing"
  • Gary Dolny and Samia A Suliman, 2001, "Characterization of gate oxide degradation mechanisms in trench-gated power MOSFETS using the charge-pumping technique"
  • Samia A Suliman, Stephen Fonash and Osama Awadelkarim, 2001, "The impact of trench geometry and processing on performance and reliability of low voltage power UMOSFETs"
  • Samia A Suliman, 2001, "The effects of channel boron-doping on the performance and reliability of N-channel trench UMOSFETs"
  • Osama Awadelkarim, Samia A Suli andan, , 1990, "Defect states in carbon and oxygen implanted p-type silicon"
  • Osama Awadelkarim, Samia A Suliman and Bo Monemar, 1989, "On the 0.34 eV hole trap in irradiated boron-doped silicon"
 

About

The Penn State Department of Engineering Science and Mechanics (ESM) is an internationally distinguished department that is recognized for its globally competitive excellence in engineering and scientific accomplishments, research, and educational leadership.

Our Engineering Science program is the official undergraduate honors program of the College of Engineering, attracting the University’s brightest engineering students. We also offer graduate degrees in ESM, engineering mechanics, engineering at the nano-scale, and an integrated undergraduate/graduate program.

Department of Engineering Science and Mechanics

212 Earth and Engineering Sciences Building

The Pennsylvania State University

University Park, PA 16802

Phone: 814-865-4523